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Nucleation of tungsten by chemical vapor deposition from WF/sub 6/ and SiH/sub 4/

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5 Author(s)
Kajikawa, Y. ; Dept. of Chem. Syst. Eng., Tokyo Univ., Japan ; Tsumura, T. ; Noda, S. ; Komiyama, H.
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In this paper, we investigated the nucleation process of W from WF/sub 6/ and SiH/sub 4/ by using a cold wall-type CVD reactor. W was then deposited from WF/sub 6/(0.42vol%)/SiH/sub 4/(0.42vol%)/ H/sub 2/(33vol%)/Ar at 5 Torr. TiN substrates were heated up under Ar atmosphere and hold at 673 K for 20 min under 35 vol% H/sub 2//Ar atmosphere at 5 Torr. The surface states was monitored in-situ by using field emission scanning electron microscopy (FESEM), micro Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS).

Published in:

Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International

Date of Conference:

29-31 Oct. 2003