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Prediction of high NA ArF lithography capabilities for 70 nm technology node using simulation

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4 Author(s)
Byung-Cheol Cha ; Dept. of Phys., Hanyang Univ., Ansan, South Korea ; Yeong-Keun Kwon ; Jun-Taek Park ; Hye-Keun Oh

Summary form only given. In this article, we will present the possible performance of high numerical aperture (NA) 193 nm lithography for 70 nm technology node using in-house simulator. This simulator can calculate the vector diffraction phenomenon which may not be neglected for high NA imaging. At low k1 optical lithography, certain illumination and mask techniques are needed to overcome process difficulties. These include off-axis illumination (OAI), alternating phase-shifting masks (alt PSMs) and chromeless phase lithography (CPL). The solution for successful low k1 imaging without any improvement of tools and materials should be the use of good combinations of several existing techniques. In addition, how the optical effects with low k1 imaging is changing should be carefully considered. This presentation will discuss the various simulation works for imaging techniques to support 70 nm node with high NA ArF lithography. Especially, we will investigate the results of critical dimension variations, exposure dose latitudes, depth of focus, MEEF and NILS with varying illumination conditions and mask types.

Published in:

Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International

Date of Conference:

29-31 Oct. 2003