By Topic

High performance carbon-nanotube field-effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Nihey, F. ; Fundamental Res. Labs., NEC Corp., Tsukuba, Japan ; Hongo, Hiroo ; Ochiai, Y. ; Yudasaka, Masako
more authors

In this paper, we discuss the electrical performance of the carbon-nanotube field-effect transistor. We investigated the intrinsic performance of CNTFETs by using top-gates.

Published in:

Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International

Date of Conference:

29-31 Oct. 2003