Microcrystalline silicon thin film formation using pulse modulated microwave plasma

In this paper, we have investigated the growth of /spl mu/c-Si:H thin films using the pulse modulated microwave plasma (MWP) with the SiF/sub 4/ addition. The crystallinity was investigated by Raman spectroscopy. The crystalline orientation was evaluated by X-ray diffraction (XRD). The Hall mobility was also evaluated.