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Microcrystalline silicon thin film formation using pulse modulated microwave plasma

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4 Author(s)
Homma, K. ; Dept. of Quantum Eng., Nagoya Univ., Japan ; Yamamoto, M. ; Hori, M. ; Goto, T.

In this paper, we have investigated the growth of /spl mu/c-Si:H thin films using the pulse modulated microwave plasma (MWP) with the SiF/sub 4/ addition. The crystallinity was investigated by Raman spectroscopy. The crystalline orientation was evaluated by X-ray diffraction (XRD). The Hall mobility was also evaluated.

Published in:

Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International

Date of Conference:

29-31 Oct. 2003