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Either at pixel or driver levels, low-temperature polysilicon (LTPS) is becoming a standard technology for the fabrication of thin-film transistors (TFTs) used in active matrix liquid crystal displays and in active matrix organic light emissive displays. Given the complexity of addressing or pixel circuits, simulation is becoming more and more necessary. In order to reach the required level of simulation efficiency, an accurate model has been developed. This model takes into account all the operating regimes, capacitors contributions, and frequency dispersion effects. In order to be able to simulate large number of matrix pixels and/or integrated drivers, this model is simple enough to allow simulator convergence. Based on 38 parameters, it presents an easy electrical parameters characterization methodology. Moreover, physical parameters use allows an easy modification of the model performances depending on polycrystalline silicon TFT technology properties and evolution.