By Topic

EMI characterization and simulation with parasitic models for a low-voltage high-current AC motor drive

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Jih-Sheng Lai ; Virginia Polytech. Inst., State Univ., Blacksburg, VA, USA ; Xudong Huang ; Shaotang Chen ; Nehl, T.W.

In this paper, a 12-V 1-kW permanent-magnet ac motor drive is tested extensively at a wide frequency range, and the frequency spectra are partitioned for identification of noise sources and their propagation paths. Switching characterization of the power MOSFET and its body diode reverse-recovery characterization are evaluated for circuit modeling. The parasitic components and common mode path are identified and measured with the time-domain reflectometry (TDR) method. The inverter circuit model is then constructed with major parasitic inductance and capacitance in device modules, passive components, leads, and interconnects. To verify the validity of the inverter model, a comparative study is performed with computer simulations and hardware experiments. The fundamental mechanisms by which the electromagnetic interference (EMI) noises are excited and propagated are analyzed, and the significant roles of parasitic elements coupling with device switching dynamics in EMI generation are examined. The results indicate that the identification of parasitic inductance through TDR measurement helps verify the voltage spike during turn-off, or vice versa. The conducted EMI noise caused by parasitic components of bus capacitor, dc bus, and devices is proven to be identifiable with the characterization and simulation techniques used in this paper.

Published in:

Industry Applications, IEEE Transactions on  (Volume:40 ,  Issue: 1 )