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CdTe low level gamma detectors based on a new crystal growth method

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2 Author(s)
E. Raiskin ; San Diego Semicond. Inc., CA, USA ; J. F. Butler

A high-pressure, vertical Bridgman approach was successfully applied to the growth of CdTe gamma-ray detector crystals for application to background-level, low-bias dosimeters. Detectors of 1.8-mm thickness were uniformly able to detect background radiation at bias levels below 10 V and exhibited other desirable features. The growth method makes it possible to produce high-quality, uniform crystals of large volume and has the potential for increasing the availability and lowering the costs of CdTe detectors.<>

Published in:

IEEE Transactions on Nuclear Science  (Volume:35 ,  Issue: 1 )