By Topic

CdTe low level gamma detectors based on a new crystal growth method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Raiskin, E. ; San Diego Semicond. Inc., CA, USA ; Butler, J.F.

A high-pressure, vertical Bridgman approach was successfully applied to the growth of CdTe gamma-ray detector crystals for application to background-level, low-bias dosimeters. Detectors of 1.8-mm thickness were uniformly able to detect background radiation at bias levels below 10 V and exhibited other desirable features. The growth method makes it possible to produce high-quality, uniform crystals of large volume and has the potential for increasing the availability and lowering the costs of CdTe detectors.<>

Published in:

Nuclear Science, IEEE Transactions on  (Volume:35 ,  Issue: 1 )