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1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy

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3 Author(s)
Liu, P.-W. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Liao, G.-H. ; Lin, H.-H.

A highly strained GaAs/GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 μm pulsed operation with a low threshold current density of 300 A/cm2. The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.

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Electronics Letters  (Volume:40 ,  Issue: 3 )