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Electromagnetic 3-D model for active linear devices: application to pHEMTs in the linear regime

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3 Author(s)
M. Farina ; Inst. di Elettromagnetismo e Bioingegneria, Univ. Politecnica delle Marche, Ancona, Italy ; L. Pierantoni ; T. Rozzi

In this paper, we describe a three-dimensional (3D) electromagnetic (EM) approach to the modeling of active devices in their linear regime. The technique basically relies on the self-consistent introduction of distributed controlled current sources in the 3D EM simulation of passive components. The approach is validated by comparing measured and calculated results for a pseudomorphic high electron-mobility transistor in the millimeter-wave range. However, it may also be applied to a larger class of field-effect transistors, including MESFETs.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:52 ,  Issue: 2 )