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Photon-induced total-internal-reflection all-optical switches

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7 Author(s)
Xiao Qing Jiang ; Dept. of Inf. & Electron. Eng., Zhejiang Univ., Hangzhou, China ; Jian Yi Yang ; Heng Zheng Zhan ; Ke Jian Chen
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An all-optical switch is demonstrated. The switch is based on the photon-induced carrier effect and the principle of the total internal reflection (TIR). An asymmetric Y-branch with multimode waveguides is designed and fabricated on GaAlAs/GaAs epitaxial materials. The 805-nm light is used to activate the carrier effects and generate the total-reflection effect at the branch. The device is characterized at the wavelength of 1.31 μm. Its extinction ratio is larger than 18.0 dB when the injected optical density is 15×101 W/mm2.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 2 )

Date of Publication:

Feb. 2004

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