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High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm

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6 Author(s)
Yi Qu ; Sch. of Mater. Eng., Nanyang Technol. Univ., Singapore ; Yuan, Shu ; Chong Yang Liu ; Baoxue Bo
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Molecular beam epitaxy (MBE) growth, device fabrication, and reliable operation of high-power InAlGaAs/GaAs and GaAlAs/GaAs laser arrays are described. Both InAlGaAs/GaAs and AlGaAs/GaAs laser arrays reached maximum continuous wave output powers of 40 W at room temperature. The external quantum efficiency was 50% and 45% for the InAlGaAs/GaAs and AlGaAs/GaAs laser arrays, respectively. Threshold current density for InAlGaAs/GaAs and AlGaAs/GaAs lasers was 303 A/cm2 and 379 A/cm2, respectively. While the current of AlGaAs laser arrays went up significantly after 1000 h of operation at a constant power of 40 W, InAlGaAs laser arrays had an increase in the injection current of less than 4% after 3000 h at 40 W.

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Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 2 )