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174-nm mode spacing in dual-wavelength semiconductor laser using nonidentical InGaAsP quantum wells

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4 Author(s)
Huang, Chi-Chia ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Chin-Hui Cheng ; Yi-Shin Su ; Ching-Fuh Lin

A very wide tuning range of dual-wavelength semiconductor lasers with properly designed nonidentical InGaAsP quantum wells is reported. As the external cavity of reflected-type grating telescope configuration is well aligned, the dual-wavelength operation can be achieved with a record wavelength separation as large as 174 nm (25 THz). The wide separation of two wavelengths is possible due to a proper modification of the external-cavity configuration and reduced gain competition of laser modes.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 2 )