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Activation of Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition

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6 Author(s)
Hamada, H. ; Semicond. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan ; Honda, S. ; Shono, M. ; Hiroyama, R.
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Activation of the Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition (MOCVD) has been successfully improved using post-heat treatment. The p-type carrier concentration and electrical activity on the (Al0.65Ga0.35)0.5In0.5P layers were 1.8*1018 cm-3 and 0.7, respectively. Activation of the Zn acceptors was found to be attributable to the hydrogen in the AlGaInP layer.

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Electronics Letters  (Volume:28 ,  Issue: 6 )