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50-nm fully depleted SOI CMOS technology with HfO2 gate dielectric and TiN gate

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19 Author(s)
Vandooren, A. ; Motorola Inc., Austin, TX, USA ; Egley, S. ; Zavala, M. ; Stephens, T.
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In this paper, we demonstrate for the first time CMOS thin-film metal gate FDSOI devices using HfO2 gate dielectric at the 50-nm physical gate length. Symmetric VT is achieved for long-channel nMOS and pMOS devices using midgap TiN single metal gate with undoped channel and high-k dielectric. The devices show excellent performance with a Ion=500 μA/μm and Ioff=10 nA/μm at VDD=1.2 V for nMOSFET and Ion=212 μA/μm and Ioff=44 pA/μm at VDD=-1.2 V for pMOSFET, with a CET=30 Å and a gate length of 50 nm. DIBL and SS values as low as 70 mV/V nand 77 mV/dec, respectively, are obtained with a silicon film thickness of 14 nm. Ring oscillators with 15 ps stage delay at VDD=1.2 V are also realized.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:2 ,  Issue: 4 )

Date of Publication:

Dec. 2003

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