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In this paper, we demonstrate for the first time CMOS thin-film metal gate FDSOI devices using HfO2 gate dielectric at the 50-nm physical gate length. Symmetric VT is achieved for long-channel nMOS and pMOS devices using midgap TiN single metal gate with undoped channel and high-k dielectric. The devices show excellent performance with a Ion=500 μA/μm and Ioff=10 nA/μm at VDD=1.2 V for nMOSFET and Ion=212 μA/μm and Ioff=44 pA/μm at VDD=-1.2 V for pMOSFET, with a CET=30 Å and a gate length of 50 nm. DIBL and SS values as low as 70 mV/V nand 77 mV/dec, respectively, are obtained with a silicon film thickness of 14 nm. Ring oscillators with 15 ps stage delay at VDD=1.2 V are also realized.