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Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications

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3 Author(s)
Moongyu Jang ; Semicond. & Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejon, South Korea ; Seongjae Lee ; Kyoungwan Park

The theoretical and experimental current-voltage characteristics of Erbium silicided n-type Schottky barrier tunneling transistors (SBTTs) are discussed. The theoretical drain current to drain voltage characteristics show good correspondence with the experimental results in 10-μm-long channel n-type SBTTs. From these results, the extracted Schottky barrier height is 0.24 eV. The experimentally manufactured n-type SBTTs with 60-nm gate lengths show typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 105 at low-drain voltage regime in drain current to gate voltage characteristics. However, the on/off ratio tends to decrease as the drain voltage increases. From the numerical simulation results, the increase of off-current is mainly attributed to the thermionic current and the increase of drain current is mainly attributed to the tunneling current.

Published in:

IEEE Transactions on Nanotechnology  (Volume:2 ,  Issue: 4 )