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The electrical characteristics of ideal rectangular cross section Si-Fin channel double-gate MOSFETs (FXMOSFETs) fabricated by a wet process have experimentally and systematically been investigated. The almost ideal S-slope of 64 mV/decade was obtained for the fabricated 20 nm Si-Fin and 125 nm gate-length FXMOSFET. This excellent subthreshold characteristic shows that the quality of the rectangular Si-Fin channel with (111)-oriented sidewall is good enough to realize high-performance FXMOSFETs. The current and transconductance multiplication accurately proportional to a number of 30 nm Si-Fin channels was confirmed in the fabricated multi-fin FXMOSFETs. The systematic investigation of the electrical characteristics of the fabricated FXMOSFETs in the 20-110-nm Si-Fin and 2.3-5.2-nm gate oxide regimes reveals that short-channel effects can be effectively suppressed by reducing the Si-Fin thickness to 20 nm or less. The developed processes are quite attractive for fabrication of ultranarrow Si-Fin channel double-gate MOSFETs.