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Double delta-doped FETs in GaAs

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2 Author(s)
K. Bord ; Univ. Coll. of Swansea, UK ; H. C. Nutt

The DC and high-frequency characteristics of a vertically stacked double delta-doped FET are reported, to the authors' knowledge, for the first time. The transconductance is shown to exhibit the expected stepped characteristic indicative of the two dopant planes being depleted in distinct and separate ranges of gate voltage. The device has a potential application to high-speed multistate logic and memory devices, with the ability to achieve a degree of vertical integration.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 5 )