By Topic

Microwave analysis of AlGaAs/InGaAs HEMT using Monte Carlo simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
P. Dollfus ; Inst. d'Electron. Fondamentale, Paris Univ., France ; S. Galdin ; P. Hesto

The current gain of an intrinsic HEMT is determined as function of frequency using small-signal Monte Carlo simulations. The fT obtained is in good agreement with the value derived from steady-state results by FT=gm/2 pi CG. A set of Z parameters is also calculated and an equivalent circuit model is deduced.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 5 )