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Electrical performance and reliability of tunnel magnetoresistance heads for 100-Gb/in2 application

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18 Author(s)
T. Kuwashima ; Head Bus. Group, TDK Corp., Nagano, Japan ; K. Fukuda ; H. Kiyono ; K. Sato
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Tunnel magnetoresistance (TuMR) heads are attractive candidates for future high-density recording. To achieve the high areal density, it is necessary for TuMR heads to get lower resistance and higher delta R/R film. A low resistance and high delta R/R tunneling junction film has been developed and used for this study. The resistance area product and delta R/R are 3 Ω·μm2 and 18%, respectively. Reliability that includes lifetime was also studied. We have found TuMR heads can be a promising candidate for 100 Gb/in2 application.

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IEEE Transactions on Magnetics  (Volume:40 ,  Issue: 1 )