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Angular sensor using tunneling magnetoresistive junctions with an artificial antiferromagnet reference electrode and improved thermal stability

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6 Author(s)
Ruhrig, M. ; Siemens Corporate Res., Erlangen, Germany ; Seidel, R. ; Bar, L. ; Rupp, G.
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Magnetic tunneling junctions (MTJs) are fabricated using CoFe-Ru-CoFe artificial antiferromagnet (AAF) sandwiches as a hard-magnetic reference layer and plasma-oxidized aluminum as a tunnel barrier. Tailoring the magnetic properties of the artificial antiferromagnet reference layer allows an on-chip magnetization (initialization) of individual junctions, which makes it possible to build monolithic bridges in a Wheatstone arrangement without multiple mask process steps or on-chip heating elements. The functionality of an angular field sensor based on this concept is demonstrated in detail. The thermal stability of such a sensor is investigated and the limitations of the concept are discussed.

Published in:

Magnetics, IEEE Transactions on  (Volume:40 ,  Issue: 1 )

Date of Publication:

Jan. 2004

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