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High-frequency response in carbon nanotube field-effect transistors

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2 Author(s)
Frank, D.J. ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Appenzeller, J.

We report electrical measurements of the radio frequency response of carbon nanotube field-effect transistors (CNFETs). The very low current drive of CNFETs makes conventional high-frequency measurements difficult. To overcome this problem, we have used a novel approach to easily measure the response up to 250 MHz in nonoptimized experimental conditions. We observe a clear response of our CNFETs with no deterioration in signal up to at least 250 MHz, which is the limit for our present configuration.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 1 )