Cart (Loading....) | Create Account
Close category search window
 

A novel low-voltage N-channel heterostructure dynamic threshold voltage MOSFET (N-HDTMOS) with p-type doped SiGe body

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Kawashima, T. ; Adv. Technol. Res. Labs., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan ; Hara, Y. ; Kanzawa, Y. ; Sorada, H.
more authors

A novel N-channel Si/SiGe heterostructure dynamic threshold voltage MOSFET (N-HDTMOS) has been proposed and fabricated. The Si/SiGe N-HDTMOS consists of an unstrained surface Si channel and heavily p-type doped SiGe body. The potential of the conduction band edge of the surface Si channel can be lowered by introducing a heavily p-type doped SiGe layer into a suitable position in the body region. As a result, the N-HDTMOS shows a threshold voltage reduction and a body effect factor (γ) enhancement while keeping high doping concentration in the SiGe layer. The fabricated SiGe N-HDTMOS exhibits superior properties, that is, 0.1 V reduction of Vth, 1.5 times enhancement of γ, and 1.3 times saturated current, as compared with those of Si N-DTMOS.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 1 )

Date of Publication:

Jan. 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.