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Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology

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4 Author(s)
Chen, K.N. ; Microsystems Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Fan, A. ; Tan, C.S. ; Reif, R.

A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10-8 Ω-cm2 are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 1 )