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High-power high-efficiency 660-nm laser diodes for DVD-R/RW

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8 Author(s)
Yagi, T. ; High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan ; Nishiguchi, H. ; Yoshida, Y. ; Miyashita, M.
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A kink mechanism in 660-nm laser diodes (LDs) has been studied experimentally. The experiments revealed that the main origin of the kink is a refractive index change due to heat generation in the stripe portion, and the kink power can be increased by improving the temperature characteristics of the LD. A newly developed LD, based on this result, shows stable lateral mode operation up to 190 mW at 80°C. This is the highest power recorded among narrow stripe LDs with a wavelength of 660 nm. This LD is suitable for the next generation of high-speed (8x-) DVD-R/RW drives necessitating 140 mW class LDs.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:9 ,  Issue: 5 )