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Properties of ion-implanted high-power angled-grating distributed-feedback lasers

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10 Author(s)
Paschke, K. ; Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany ; Bogatov, A. ; Bugge, F. ; Drakin, A.E.
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An improvement of the linearity of the light-current characteristics and the beam quality of high-power α-distributed feedback lasers is achieved by an ion implantation of the regions outside the contact stripe. The linear part of the light-current characteristics of 4-mm-long devices emitting at 1060 nm is extended to P=1.8 W output power. The times-diffraction-limit factor M2 remains constant, equal to 1.7 over the whole power range. Simulations of the electro-optical behavior reveal that the improvement is achieved by a suppression of optical field components which propagate inside the cavity perpendicular to the facets.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:9 ,  Issue: 5 )