By Topic

Properties of ion-implanted high-power angled-grating distributed-feedback lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
K. Paschke ; Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany ; A. Bogatov ; F. Bugge ; A. E. Drakin
more authors

An improvement of the linearity of the light-current characteristics and the beam quality of high-power α-distributed feedback lasers is achieved by an ion implantation of the regions outside the contact stripe. The linear part of the light-current characteristics of 4-mm-long devices emitting at 1060 nm is extended to P=1.8 W output power. The times-diffraction-limit factor M2 remains constant, equal to 1.7 over the whole power range. Simulations of the electro-optical behavior reveal that the improvement is achieved by a suppression of optical field components which propagate inside the cavity perpendicular to the facets.

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:9 ,  Issue: 5 )