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GSMBE grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 590

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2 Author(s)
Lu, S.S. ; Nat. Taiwan Univ., Taipei, Taiwan ; Huang, C.C.

The first lattice-matched Ga0.51In0.49P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy is reported. Small signal current gains exceeding 590 and small offset voltages ( approximately 120 meV) were obtained. These results demonstrate that (GaIn)P is a good alternative to the (AlGa)As in GaAs-based devices.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 4 )