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The first lattice-matched Ga0.51In0.49P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy is reported. Small signal current gains exceeding 590 and small offset voltages ( approximately 120 meV) were obtained. These results demonstrate that (GaIn)P is a good alternative to the (AlGa)As in GaAs-based devices.
Date of Publication: 13 Feb. 1992