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Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node

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5 Author(s)
Roche, P. ; STMicroelectronics, Crolles, France ; Gasiot, G. ; Forbes, K. ; O'Sullivan, V.
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This paper presents experimental ASER on SOI and BULK SRAMs for the 250-, 130-, and 90-nm technologies. The key parameters controlling soft error rate (SER) in these technologies are modeled with Monte Carlo simulations to predict SER to the 65-nm node.

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Nuclear Science, IEEE Transactions on  (Volume:50 ,  Issue: 6 )