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Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET

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6 Author(s)
Gouker, P. ; Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA ; Burns, J. ; Wyatt, P. ; Warner, K.
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We studied the total dose radiation effects from an X-ray source in submicron fully depleted n-channel field effect transistors on conventional SOI wafers, after substrate removal, and after buried oxide thinning. A significant enhancement in radiation tolerance is observed both after substrate removal and after subsequent buried oxide thinning.

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Nuclear Science, IEEE Transactions on  (Volume:50 ,  Issue: 6 )