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GaAs flipchip pin diode for millimetre-wave application

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3 Author(s)
Calligaro, M. ; Thomson Composants Microondes, Orsay, France ; Dua, C. ; d'Hayer, F.

Millimetre-wave pin diodes have been developed for the first time in a flipchip structure, to achieve repeatability in the device features. GaAs flipchip pin diodes were manufactured on a semi-insulating substrate, and bondpads were located on mesas to minimise the parasitic elements. A waveguide switch with two biased diodes has shown, in the 94 GHz window, less than 1 dB of insertion loss, greater than 30 dB of isolation, and a switching time lower than 10 nS.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 4 )