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Fully depleted n-MOSFETs on supercritical thickness strained SOI

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12 Author(s)
Lauer, I. ; Microsystems Technol. Lab., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Langdo, T.A. ; Cheng, Z.-Y. ; Fiorenza, J.G.
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Strained silicon-on-insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced parasitic capacitance and improved MOSFET scalability of thin-film SOI. We demonstrate fabrication of highly uniform SiGe-free SSOI wafers with 20% Ge equivalent strain and report fully depleted n-MOSFET results. We show that enhanced mobility is maintained in strained Si films transferred directly to SiO2 from relaxed Si0.8Ge0.2 virtual substrates, even after a generous MOSFET fabrication thermal budget. Further, we find the usable strained-Si thickness of SSOI significantly exceeds the critical thickness of strained Si/SiGe without deleterious leakage current effects typically associated with exceeding this limit.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 2 )

Date of Publication:

Feb. 2004

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