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Optimal microwave properties of thin BSTO films for high frequency applications

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4 Author(s)
A. V. Tumarkin ; Dept. of Electron Ion & Vacuum Technol., St. Petersburg Elecrotech. Univ., Russia ; S. V. Razumov ; A. G. Gagarin ; A. B. Kozyrev

The influence of deposition parameters on microwave properties of BaxSr1-xTiO3 (BSTO) films deposited on alumina substrate has been investigated in a wide frequency range (1-30 GHz). The best combination of high tunability (n) and low losses (tan δ) at room temperature was obtained for the 30% Ba content target. The best BSTO films exhibited n=2.1 and tan δ=0.016 at 1 GHz and zero bias. This result is among the best reported for sputtered BSTO on alumina substrates.

Published in:

Microwave Conference, 2003. 33rd European  (Volume:3 )

Date of Conference:

7-9 Oct. 2003