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Ka-Band MEMS switches on CMOS grade silicon with a polyimide interface layer

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3 Author(s)
Ponchak, G.E. ; NASA Glenn Res. Center, Cleveland, OH, USA ; Varaljay, N.C. ; Papapolymerou, J.

For the first time, RF MEMS switches on CMOS grade Si with a polyimide interface layer are fabricated and characterized. At Ka-Band (36.6 GHz), an insertion loss of 0.52 dB and an isolation of 20 dB is obtained.

Published in:

Microwave Conference, 2003. 33rd European  (Volume:3 )

Date of Conference:

7-9 Oct. 2003

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