Cart (Loading....) | Create Account
Close category search window
 

Silicon-on-nothing MOSFETs: performance, short-channel effects, and backgate coupling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Pretet, J. ; STMicroelectronics, Crolles, France ; Monfray, S. ; Cristoloveanu, S. ; Skotnicki, T.

Silicon-on-nothing (SON) transistors with gate length varying from 0.25 μm down to 80 nm exhibit excellent performance and scalability. The silicon-on-insulator (SOI)-like architecture with thin fully depleted Si film and ultrathin buried oxide results in attenuated short-channel effects (charge sharing, DIBL and fringing fields), high current, and electron mobility. A new model accounts for the intrinsic mechanisms of operation in SON MOSFETs: i) substrate depletion governed by source and drain via doping modulation, ii) relatively low coupling between the front- and backgates, iii) role of ultrathin buried oxide. The proposed model reproduces the variations of the threshold voltage and subthreshold swing and is useful for further device optimization.

Published in:

Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 2 )

Date of Publication:

Feb. 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.