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A global interconnect optimization scheme for nanometer scale VLSI with implications for latency, bandwidth, and power dissipation

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3 Author(s)
Man Lung Mui ; Coordinated Sci. Lab., Univ. of Illinois, Urbana, IL, USA ; Banerjee, K. ; Mehrotra, A.

This paper addresses the critical problem of global wire optimization for nanometer scale very large scale integration technologies, and elucidates the impact of such optimization on power dissipation, bandwidth, and performance. Specifically, this paper introduces a novel methodology for optimizing global interconnect width, which maximizes a novel figure of merit (FOM) that is a user-defined function of bandwidth per unit width of chip edge and latency. This methodology is used to develop analytical expressions for optimum interconnect widths for typical FOMs for two extreme scenarios regarding line spacing: 1) spacing kept constant at its minimum value and 2) spacing kept the same as line width. These expressions have been used to compute the optimal global interconnect width and quantify the effect of increasing the line width on various performance metrics such as delay per unit length, total repeater area and power dissipation, and bandwidth for various International Technology Roadmap for Semiconductors technology nodes.

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Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 2 )