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Large grain poly-Si(∼rm 10μm) TFTs prepared by excimer laser annealing through a thick SiON absorption layer

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2 Author(s)
Sheng-Da Liu ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Si-Chen Lee

Poly-Si with large grain size of 10.4×4.4 μm2 was realized by excimer laser annealing (ELA) through the substrate and an 1 μm thick silicon oxynitride (SiON) absorption layer underlying the top amorphous silicon. Thin-film transistors (TFTs) can then be made on this single poly-Si grain and show good electrical performance.

Published in:

Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 2 )