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A method for measuring the complex reflectivity associated with a localized defect existing inside a laser diode cavity is presented. It relies on analyzing the magnitudes of resonant peaks in the Fourier transform of a subthreshold laser spectrum. Reflectivities between 0.01 and 0.02 with zero phase have been measured in a laser with a deliberately induced scattering center produced by standard lithographic techniques.
Date of Publication: Jan. 2004