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Reflectivity measurements of intracavity defects in laser diodes

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3 Author(s)
P. Lambkin ; Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland ; C. Percival ; B. Corbett

A method for measuring the complex reflectivity associated with a localized defect existing inside a laser diode cavity is presented. It relies on analyzing the magnitudes of resonant peaks in the Fourier transform of a subthreshold laser spectrum. Reflectivities between 0.01 and 0.02 with zero phase have been measured in a laser with a deliberately induced scattering center produced by standard lithographic techniques.

Published in:

IEEE Journal of Quantum Electronics  (Volume:40 ,  Issue: 1 )