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An interfacial-fracture-mechanics-based simulation methodology has been developed to study the flip-chip packaging effect on the copper/low-k structures. Multilevel submodeling techniques have been used to bridge the scale difference between the flip-chip packages and the metal/dielectric stacks. To achieve a smaller feature size and higher speed in future chips, SiO2 can be replaced with low-k dielectric material in all via and trench layers or the number of metal layers can be increased. The effect of both packaging options has been evaluated. With either option, the future flip-chip copper/low-k packages are facing higher possibilities of adhesive or cohesive failure near the low-k interface. This paper provides a quantitative evaluation of the increased risk, thus providing guidelines to the next level of low-k flip-chip packages.
Device and Materials Reliability, IEEE Transactions on (Volume:3 , Issue: 4 )
Date of Publication: Dec. 2003