By Topic

Device reliability and failure mechanisms related to gate dielectrics and interconnects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Radhakrishnan, M.K. ; Microelectron., Nat. Univ. of Singapore, Singapore

As dimensions shrink, the reliability considerations become more trivial. In deep sub-micron devices, at certain stages of processing, even an atomic layer variation can be a defect. Studies on the physical failure mechanisms in sub-micron devices reveals that the major reliability concerns are the same as that poses before scaling. A comprehensive overview on the reliability issues in ultra thin gate dielectrics and copper interconnect material is given to link how the physical effects on devices can be a threat to long-term reliability.

Published in:

VLSI Design, 2004. Proceedings. 17th International Conference on

Date of Conference:

2004