By Topic

Exploring the novel characteristics of fully depleted dual-material gate (DMG) SOI MOSFET using two-dimensional numerical simulation studies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
A. Chaudhry ; Dept. of Electr. Eng., Indian Inst. of Technol., Delhi, India ; M. J. Kumar

The novel features of a fully depleted (FD) dual-material gate (DMG) SOI MOSFET are explored theoretically and compared with those of a compatible SOI MOSFET. The two-dimensional (2-D) numerical simulation studies demonstrate the novel features as threshold voltage roll-up and simultaneous transconductance enhancement and suppression of short-channel effects (SCE' s) offered by the DMG SOI MOSFET. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate material. This work illustrates the benefits of high performance DMG SOI MOS devices over their single material gate (SMG) counterparts and provides an incentive for their experimental exploration.

Published in:

VLSI Design, 2004. Proceedings. 17th International Conference on

Date of Conference: