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Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates

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9 Author(s)
J. -W. Lee ; Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA ; V. Kumar ; R. Schwindt ; A. Kuliev
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High-performance, low-noise AlGaN/GaN high electron mobility transistors (HEMTs) with 0.25 μm gate-length have been fabricated on semi-insulating 6H-SiC substrates. The devices exhibited a unity current gain cutoff frequency (fT) of 52.3 GHz, and maximum frequency of oscillation (fMAX) of 112 GHz. At 10 GHz, a minimum noise figure (NFmin) of 0.75 dB and an associated gain (Ga) of 10.84 dB was obtained when biased at VDS=10 V and IDS=40.6 mA/mm. The corresponding values were 1.15 and 7.49 dB at 18 GHz. These results are the first reported microwave noise characteristics obtained from 0.25 μm gate-length GaN HEMTs on 6H-SiC substrates. The use of 6H-SiC substrates provides an alternative solution to the full commercialisation of GaN-based technologies for low-noise and high-power electronics.

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Electronics Letters  (Volume:40 ,  Issue: 1 )