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Back-gated MOSFETs with controlled silicon thickness for adaptive threshold-voltage control

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2 Author(s)
Avci, U. ; Sch. of Appl. & Eng. Phys., Cornell Univ., Ithaca, NY, USA ; Tiwari, S.

Experimental results for back-gated thin silicon transistors that allow adaptive threshold-voltage control and exhibit low drain-induced-barrier-lowering due to improved electrostatics of the geometry are reported. The implementation of the back-gate is achieved by a low-temperature bonding process capable of tens of nanometre silicon channel thickness, good surface and bulk quality. The technology is compatible with mainstream silicon CMOS processing technology.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 1 )