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Performance of amorphous diamond RF MEMS capacitive switch

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5 Author(s)
Webster, J.R. ; Sandia Nat. Labs., Albuquerque, NM, USA ; Dyck, C.W. ; Sullivan, J.P. ; Friedmann, T.A.
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Radio frequency microelectromechanical systems (RF MEMS) capacitive switches using amorphous diamond (a-D) as a novel dielectric with controlled leakage have been successfully developed. The devices show a unipolar switching response to a unipolar stimulus, indicating the absence of significant dielectric charging. These initial devices exhibit a down-state capacitance of 2.6 pF and a predicted static power dissipation of 10 nW. This technology is promising for the development of reliable, low-power RF MEMS switches.

Published in:
Electronics Letters  (Volume:40 ,  Issue: 1 )

Date of Publication: 8 Jan. 2004

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