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Design of low-voltage MOSFET-only ΣΔ modulators in standard digital CMOS technology

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4 Author(s)
Tille, T. ; Inst. of Tech. Electron., Tech. Univ. of Munich, Germany ; Sauerbrey, J. ; Mauthe, M. ; Schmitt-Landsiedel, D.

A design strategy of low-voltage high-linearity MOSFET-only ΣΔ modulators in standard digital CMOS technology is presented. The modulators use substrate-biased MOSFETs in the depletion region as capacitors, linearized by different compensation techniques. This work shows the design, simulation and measured results of a number of MOSFET-only ΣΔ modulators using different implementations of so called compensated depletion-mode MOS capacitors. The modulators are designed for the demands of speech band applications. The performance of the modulators proves the capability of compensated depletion-mode MOS capacitors to fulfill analog circuit requirements at low supply voltages with reduced processing efforts.

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Circuits and Systems I: Regular Papers, IEEE Transactions on  (Volume:51 ,  Issue: 1 )