Referenced Items are not available for this document.
A high gain, ultra wideband and low noise SiGe/BiCMOS distributed amplifier for a 4G multiband, multimode mobile terminal is presented. The proposed SiGe/BiCMOS cascaded single stage distributed amplifier (CSSDA) has shown 21 dB power gain with power flatness of ± 0.5 dB and return loss less than -10 dB for both input and output over the frequency range from 300 KHz to 15 GHz. This is the first SiGe/BiCOMS HBT based-CSSDA, which combines the active load loss compensation algorithm to achieve the ultra-high gain over one decade of bandwidth using commercially available SiGe/BiCMOS technology.
Published in:
Personal, Indoor and Mobile Radio Communications, 2003. PIMRC 2003. 14th IEEE Proceedings on
(Volume:3
)
Date of Conference: 7-10 Sept. 2003
- Page(s):
- 2180 - 2184 vol.3
- Print ISBN:
- 0-7803-7822-9
- INSPEC Accession Number:
- 7985373
- Digital Object Identifier :
- 10.1109/PIMRC.2003.1259102
- Product Type:
- Conference Publications
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