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High gain and ultra wideband SiGe/BiCMOS cascaded single stage distributed amplifier for 4G RF front-end applications

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4 Author(s)
Koon, K.L. ; Dept. of Electron. Eng., King''s Coll., London, UK ; Hu, Z. ; Aghvami, H. ; Rezazadeh, A.A.

A high gain, ultra wideband and low noise SiGe/BiCMOS distributed amplifier for a 4G multiband, multimode mobile terminal is presented. The proposed SiGe/BiCMOS cascaded single stage distributed amplifier (CSSDA) has shown 21 dB power gain with power flatness of ± 0.5 dB and return loss less than -10 dB for both input and output over the frequency range from 300 KHz to 15 GHz. This is the first SiGe/BiCOMS HBT based-CSSDA, which combines the active load loss compensation algorithm to achieve the ultra-high gain over one decade of bandwidth using commercially available SiGe/BiCMOS technology.

Published in:

Personal, Indoor and Mobile Radio Communications, 2003. PIMRC 2003. 14th IEEE Proceedings on  (Volume:3 )

Date of Conference:

7-10 Sept. 2003