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Low-voltage high-isolation DC-to-RF MEMS switch based on an S-shaped film actuator

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2 Author(s)
Oberhammer, J. ; Microsystem Technol. Group, R. Inst. of Technol., Stockholm, Sweden ; Stemme, G.

This paper presents a new electrostatically actuated microelectromechanical series switch for switching dc to radio frequency (RF) signals. The device is based on a flexible S-shaped film moving between a top and a bottom electrode in touch-mode actuation. This concept, in contrast to most other microelectrochemical systems (MEMS) switches, allows a design with a low actuation voltage independent of the off-state gap height. This makes larger nominal switching contact areas for lower insertion loss possible, by obtaining high isolation in the off-state. The actuation voltages of the first prototype switches are 12 V to open, and 15.8 V to close the metal contact. The RF isolation with a gap distance of 14.2 μm is better than -45 dB up to 2 GHz and -30 dB at 15 GHz despite a large nominal switching contact area of 3500 μm2.

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Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 1 )