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Performance and reliability of low-temperature polysilicon TFT with a novel stack gate dielectric and stack optimization using PECVD nitrous oxide plasma

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3 Author(s)
Kow-Ming Chang ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Taiwan, Taiwan ; Wen-Chih Yang ; Chiu-Pao Tsai

This paper proposes a novel tetraethylorthosilicate (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si thin-film transistors, composed of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by PECVD N2O plasma. The novel stack gate dielectric exhibits a very high electrical breakdown field of 8.5 MV/cm, which is approximately 3 MV/cm higher than traditional PECVD TEOS oxide. The novel stack oxide also has better interface quality, lower bulk-trap density, and higher long-term reliability than PECVD TEOS dielectrics. These improvements are attributed to the formation of strong Si≡N bonds of high quality ultra-thin oxynitride grown by PECVD N2O plasma, and the reduction in the trap density at the oxynitride/poly-Si interface.

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Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 1 )