By Topic

A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
N. Nenadovic ; Lab. of ECTM, Delft Univ. of Technol., Netherlands ; V. d'Alessandro ; L. K. Nanver ; F. Tamigi
more authors

Analytical expressions for the electrothermal parameters governing thermal instability in bipolar transistors, i.e., thermal resistance RTH, critical temperature Tcrit and critical current JC,crit, are established and verified by measurements on silicon-on-glass bipolar NPNs. A minimum junction temperature increase above ambient due to selfheating that can cause thermal breakdown is identified and verified to be as low as 10-20°C. The influence of internal and external series resistances and the thermal resistance explicitly included in the expressions for Tcrit and JC,crit becomes clear. The use of the derived expressions for determining the safe operating area of a device and for extracting the thermal resistance is demonstrated.

Published in:

IEEE Transactions on Electron Devices  (Volume:51 ,  Issue: 1 )