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A CMOS-compatible rapid vapor-phase doping process for CMOS scaling

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4 Author(s)
Uchino, Takashi ; Dept. of Electron. & Comput. Sci., Univ. of Southampton, UK ; Ashburn, P. ; Kiyota, Y. ; Shiba, T.

An advanced CMOS process, which used rapid vapor-phase doping (RVD) for pMOSFETs and solid-phase diffusion (SPD) for nMOSFETs, has been developed. Using the RVD technique, a 40-nm-deep p-type extension with a sheet resistance as low as 400 Ω/sq has been realized. These RVD and SPD devices demonstrate excellent short-channel characteristics down to 0.1 μm channel length and 40% higher drain current, compared with conventional devices with ion implanted source/drain (S/D) extensions, and high-speed circuit performance. We investigate the effect of the S/D extension structure on the device performance and find that a gate extension overlap of 25 nm enables excellent dc and high-speed circuit performance in 0.1-μm devices.

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Electron Devices, IEEE Transactions on  (Volume:51 ,  Issue: 1 )